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The high sensitivity of InN under rare earth ion implantation at medium range energy

Identifieur interne : 002309 ( Main/Repository ); précédent : 002308; suivant : 002310

The high sensitivity of InN under rare earth ion implantation at medium range energy

Auteurs : RBID : Pascal:11-0431522

Descripteurs français

Pascal (Inist)
- Implantation ion, Endommagement, Epitaxie phase vapeur, Fluence, Couche superficielle, Diffraction électron, Addition europium, Microscopie électronique transmission, Nitrure d'indium, Nanostructure, InN.

English descriptors

KwdEn :
- Damage, Electron diffraction, Europium additions, Fluence, Indium nitride, Ion implantation, Nanostructures, Surface layers, Transmission electron microscopy, VPE.

Abstract

In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several micrometres were produced by hydride vapour phase epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ion implantation. Starting at a low fluence of around 5 x 1012 Eu cm-2, an extensive modification of the surface layer takes place. The dissociation of InN and the presence of misoriented nanograins are observed in the damaged area. Analysis by electron diffraction indicates that the nanograins correspond to indium oxide In2O3.

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Pascal:11-0431522

Le document en format XML

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<author><name sortKey="Lacroix, B" uniqKey="Lacroix B">B. Lacroix</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Centre de Recherche sur les Ions, les Materiaux et la Photonique, UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Maréchal Juin</s1>
<s2>14050 Caen</s2>
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<country>France</country>
<placeName><region type="region" nuts="2">Basse-Normandie</region>
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<author><name sortKey="Chauvat, M P" uniqKey="Chauvat M">M. P. Chauvat</name>
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<country>France</country>
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<author><name sortKey="Ruterana, P" uniqKey="Ruterana P">P. Ruterana</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Centre de Recherche sur les Ions, les Materiaux et la Photonique, UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Maréchal Juin</s1>
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<author><name sortKey="Lorenz, K" uniqKey="Lorenz K">K. Lorenz</name>
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<author><name sortKey="Alves, E" uniqKey="Alves E">E. Alves</name>
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<author><name sortKey="Syrkin, A" uniqKey="Syrkin A">A. Syrkin</name>
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<s2>Silver Spring, MD 20904</s2>
<s3>USA</s3>
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<country>États-Unis</country>
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<date when="2011">2011</date>
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<seriesStmt><idno type="ISSN">0022-3727</idno>
<title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Damage</term>
<term>Electron diffraction</term>
<term>Europium additions</term>
<term>Fluence</term>
<term>Indium nitride</term>
<term>Ion implantation</term>
<term>Nanostructures</term>
<term>Surface layers</term>
<term>Transmission electron microscopy</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Implantation ion</term>
<term>Endommagement</term>
<term>Epitaxie phase vapeur</term>
<term>Fluence</term>
<term>Couche superficielle</term>
<term>Diffraction électron</term>
<term>Addition europium</term>
<term>Microscopie électronique transmission</term>
<term>Nitrure d'indium</term>
<term>Nanostructure</term>
<term>InN</term>
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<front><div type="abstract" xml:lang="en">In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several micrometres were produced by hydride vapour phase epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ion implantation. Starting at a low fluence of around 5 x 1012 Eu cm-2, an extensive modification of the surface layer takes place. The dissociation of InN and the presence of misoriented nanograins are observed in the damaged area. Analysis by electron diffraction indicates that the nanograins correspond to indium oxide In2O3.</div>
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<sZ>5 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several micrometres were produced by hydride vapour phase epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ion implantation. Starting at a low fluence of around 5 x 1012 Eu cm-2, an extensive modification of the surface layer takes place. The dissociation of InN and the presence of misoriented nanograins are observed in the damaged area. Analysis by electron diffraction indicates that the nanograins correspond to indium oxide In2O3.</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Implantation ion</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Fluence</s0>
<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Addition europium</s0>
<s5>08</s5>
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<s5>08</s5>
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<s5>16</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>52</s5>
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<fN21><s1>297</s1>
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The high sensitivity of InN under rare earth ion implantation at medium range energy

The high sensitivity of InN under rare earth ion implantation at medium range energy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri